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sláma až na Volný gaas laser Pramínek Drahocenný Nápaditý

Room-temperature CW InGaAs 980nm laser diodes on on-axis silicon
Room-temperature CW InGaAs 980nm laser diodes on on-axis silicon

Generation of nanosecond and subnanosecond laser pulses by AlGaAs/GaAs laser-thyristor  with narrow mesa stripe contact
Generation of nanosecond and subnanosecond laser pulses by AlGaAs/GaAs laser-thyristor with narrow mesa stripe contact

Photonics | Free Full-Text | High-Power, High-Efficiency Red Laser Diode  Structures Grown on GaAs and GaAsP Metamorphic Superlattices
Photonics | Free Full-Text | High-Power, High-Efficiency Red Laser Diode Structures Grown on GaAs and GaAsP Metamorphic Superlattices

Quantum-dot lasers provide high performance near 1.15 microns
Quantum-dot lasers provide high performance near 1.15 microns

Principles of AlGaAs Laser Diodes
Principles of AlGaAs Laser Diodes

850 nm GaAs/AlGaAs DFB lasers with shallow surface gratings and oxide  aperture
850 nm GaAs/AlGaAs DFB lasers with shallow surface gratings and oxide aperture

Center for Quantum Devices - Aluminum-Free InGaAsP/GaAs Lasers Emitting at  980 nm and 808 nm
Center for Quantum Devices - Aluminum-Free InGaAsP/GaAs Lasers Emitting at 980 nm and 808 nm

Materials | Free Full-Text | Low-Frequency Noise Investigation of 1.09 μm  GaAsBi Laser Diodes
Materials | Free Full-Text | Low-Frequency Noise Investigation of 1.09 μm GaAsBi Laser Diodes

Design and Realization of Novel GaAs Based Laser Concepts | SpringerLink
Design and Realization of Novel GaAs Based Laser Concepts | SpringerLink

Course 3, Module 11, Semiconductor Lasers
Course 3, Module 11, Semiconductor Lasers

Process Technology for Semiconductor Laser and Its Applications
Process Technology for Semiconductor Laser and Its Applications

Microscopic mechanism underlying double-state lasing in an InAs/GaAs  quantum dot laser diode elucidated using coupled rate equations and the  spontaneous emission recorded from a window structure
Microscopic mechanism underlying double-state lasing in an InAs/GaAs quantum dot laser diode elucidated using coupled rate equations and the spontaneous emission recorded from a window structure

Semiconductor laser Diodes, Edge-emitting lasers, Fabry-Perot Lasers
Semiconductor laser Diodes, Edge-emitting lasers, Fabry-Perot Lasers

Indium gallium arsenide laser diode on exact germanium-on-silicon substrate
Indium gallium arsenide laser diode on exact germanium-on-silicon substrate

InAs/GaAs Quantum Dot Dual-Mode Distributed Feedback Laser Towards Large  Tuning Range Continuous-Wave Terahertz Application | Discover Nano | Full  Text
InAs/GaAs Quantum Dot Dual-Mode Distributed Feedback Laser Towards Large Tuning Range Continuous-Wave Terahertz Application | Discover Nano | Full Text

Chip-scale high-peak-power semiconductor/solid-state vertically integrated  laser | Nature Communications
Chip-scale high-peak-power semiconductor/solid-state vertically integrated laser | Nature Communications

Methods for Switching Radiation Polarization in GaAs Laser Diodes |  SpringerLink
Methods for Switching Radiation Polarization in GaAs Laser Diodes | SpringerLink

PDF] Stripe-geometry GaAs-InGaAs laser diode with back-side contact on  silicon by epitaxial lift-off | Semantic Scholar
PDF] Stripe-geometry GaAs-InGaAs laser diode with back-side contact on silicon by epitaxial lift-off | Semantic Scholar

Semiconductor laser Diodes, Edge-emitting lasers, Fabry-Perot Lasers
Semiconductor laser Diodes, Edge-emitting lasers, Fabry-Perot Lasers

Principles of AlGaAs Laser Diodes
Principles of AlGaAs Laser Diodes

Center for Quantum Devices - Aluminum-Free InGaAsP/GaAs Lasers Emitting at  980 nm and 808 nm
Center for Quantum Devices - Aluminum-Free InGaAsP/GaAs Lasers Emitting at 980 nm and 808 nm

Structural investigations of picosecond laser ablated GaAs nanoparticles in  different liquids - ScienceDirect
Structural investigations of picosecond laser ablated GaAs nanoparticles in different liquids - ScienceDirect

Figure 1 | 2.3 µm InGaAsSb/AlGaAsSb Quantum-Well Laser Diode via InAs/GaSb  Superlattice Layer on GaAs Substrate
Figure 1 | 2.3 µm InGaAsSb/AlGaAsSb Quantum-Well Laser Diode via InAs/GaSb Superlattice Layer on GaAs Substrate

Temperature dependent admittance spectroscopy of GaAs/AlGaAs  single-quantum-well laser diodes (SQWLDs) - ScienceDirect
Temperature dependent admittance spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes (SQWLDs) - ScienceDirect

1µm GaAs laser made on silicon
1µm GaAs laser made on silicon